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ABSTRACT
Half heusler materials have gained the interest of many researchers due to the fact that they find application in electronics, optoelectronics and spintronics industries. Properties of these half heusler alloys are most times affected during machining, hence we are motivated to study these properties under the influence of pressure.
In this work, first principle calculation based on density functional theory is used to investigate the effect of pressure on the electronic and mechanical properties of TiNiSn.
Our results showed that the electronic band gap reduces as pressure increases. At each pressure interval we observe that the band gap began to increase. The mechanical properties of TiNiSn have been found to increase as the pressure increases
