ABSTRACT

Semi-conductor thin films of copper-sulphide (CuS), were successfully deposited on glass substrates and room temperature, using improved solution growth technique (SGT) at different bath concentration. Absorbance spectra(A) data were measured by a T80+UV/VIS Double beam spectrometer was used to obtain the spectra absorbance data, while the other optical and solid-state properties of the films were obtained by calculations based on theory. The average optical and solid-state properties include:

Absorbance(A)=0.001-0.322, Transmittance(T)=0.476-1.002, Reflectance (R)=-0.002-0.202, Absorbing power(a)=-0.002-0.742, Refractive index(n)=0.914-2.629. Average solid-state properties are, Film Thickness(t)=0.476-1.002 and band gap (Eg)= 1.34-3.47eV.

It is observed that the films have n>1.9, these films could find useful applications as:

(i) Construction of poultry house, (ii) Solar cells, (iii) anti-dazzling coatings.

The deposited films with band gap (Eg) within light energy range (-1.3-3.5 eV) of electromagnetic spectrum could find application in solar electricity for rural electrification to improve the standard of living, Telecommunication, Remote monitoring and control system.